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Homogenization of a nonlinear monotone problem with nonlinear Signorini boundary conditions in a domain with highly rough boundary.

编辑:wfy 时间:2018年11月12日 访问次数:285

Title: Homogenization of a nonlinear monotone problem with nonlinear Signorini boundary conditions in a domain with highly rough boundary.

 Speaker: Prof. Antonio Gaudiello (Universita di Cassino e del Lazio Meridionale )

Time: 10:30am, Nov. 13

 Location: Room 200-9, Sir Shaw Run Run Business Administration building, School of Mathematical Sciences, Yuquan Campus

 

Abstract: As naonmanufacturing techonology has been widely used in semiconductor device fabrication, numerical simulation plays a more and more important role in design of new nanoscale devices. In this talk, I will introduce a platform we developed based on numerical solution of the multi-subband equation which is a quantum-classical hybrid model.  The model  describes the subbands produced by the  quantum confinement in one direction by Shcroedinger-Poisson system and the carrier transport in the channel direction by the Botlzmann equation. The platform is suitable to study not only IV semiconductors such as silicon semiconductors but also III-V compound semiconductors. The influence of various scattering mechanisms and crystal orientations are studied on the platform. In addition, a method for calibrating the drift-diffusion (DD) model is also proposed so that the quasi-ballistic transport phenomenon can be accurately described by the modified DD model. Then I will introduce two algorithms for the multi-subband BTE. One is the non-split positive flux-conserving scheme for solving the transport part of the BTE, and the other is the discrete kernel preserving method for 1D electron-phonon scattering.

 

Contact Person: Wei Wang (wangw07@zju.edu.cn)