Numerical simulation of semiconductor devices by solving multi-subband Boltzmann equation
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Time :
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浙江大学数学科学学院九十周年院庆系列活动之八十四
Title: Numerical simulation ofsemiconductor devices by solving multi-subband Boltzmann equation
Speaker: Prof. Tiao Lu (School ofMathematical Sciences, Peking University )
Time: 3:30-5:30pm, Nov. 9,2018
Location: Room 200-9, Sir Shaw Run RunBusiness Administration building, School of Mathematical Sciences, YuquanCampus
Abstract: As naonmanufacturing techonologyhas been widely used in semiconductor device fabrication, numerical simulation playsa more and more important role in design of new nanoscale devices. In thistalk, I will introduce a platform we developed based on numerical solution of themulti-subband equation which is a quantum-classical hybrid model. The model describes the subbands produced by the quantum confinement in one direction by Shcroedinger-Poisson system andthe carrier transport in the channel direction by the Botlzmann equation. Theplatform is suitable to study not only IV semiconductors such as silicon semiconductorsbut also III-V compound semiconductors. The influence of various scatteringmechanisms and crystal orientations are studied on the platform. In addition, amethod for calibrating the drift-diffusion (DD) model is also proposed so thatthe quasi-ballistic transport phenomenon can be accurately described by themodified DD model. Then I will introduce two algorithms for the multi-subbandBTE. One is the non-split positive flux-conserving scheme for solving thetransport part of the BTE, and the other is the discrete kernel preservingmethod for 1D electron-phonon scattering.
Contact Person: Qinghai Zhang (qinghai@zju.edu.cn)